Cascaded active regions in 2.4 μm GaInAsSb light-emitting diodes for improved current efficiency

摘要

By cascading multiple GaInAsSb active regions, the authors have fabricated 2.4μm light-emitting diodes that, for a given light output, operate at reduced current and higher voltage, which can be advantageous for battery-powered sensor applications. Tunnel heterojunctions separating emission regions add no measurable series resistance. Devices are demonstrated at room temperature with continuous wave output.