Transmission electron microscopy characterization and sculpting of sub-1 nm Si-O-C freestanding nanowires grown by electron beam induced deposition

摘要

The authors present a transmission electron microscopy characterization and sculpting of freestanding Si-O-C nanowires, fabricated by electron beam induced deposition from a tetraethylorthosilicate precursor, in a dual beam system. Electron energy loss spectroscopy and near edge structure analyses performed on as deposited wires show the formation of amorphous silicon dioxide with extra oxygen and carbon content. Subsequent electron beam sculpting by 200 keV transmission electron microscope irradiation decreases carbon and oxygen contents leaving the silicon oxidation state unchanged and narrows Si-O-C wire width to less than 1 nm.