Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications

摘要

The formation of Ru nanocrystals is demonstrated on a SiO_2 substrate by plasma enhanced atomic layer deposition using diethylcyclopentadienyl ruthenium and NH_3 plasma. The island growth of Ru was observed at the initial stages of the film formation up to a nominal thickness of 11.1 nm. A maximum Ru nanocrystal spatial density of 9.7 X 10~(11) /cm~2 was achieved with an average size of 3.5 nm and standard deviation of the size of 20%. Electron charging/discharging effect in the Ru nanocrystals is demonstrated by measuring the flatband voltage shift in the capacitance-voltage measurement of metal-oxide-semiconductor memory capacitor structure.