机译:基于具有光子晶体的GaN基超薄微腔发光二极管的近乎单引导模式提取的高方向发射图
Department of Photonics, Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute,Hsinchu 310, Taiwan;
Department of Photonics, Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan;
Department of Photonics, Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan;
Department of Photonics, Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan;
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute,Hsinchu 310, Taiwan;
Department of Photonics, Institute of Electro-Optical Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan;
Electronics and Optoelectronics Research Laboratories, Industrial Technology Research Institute,Hsinchu 310, Taiwan;
机译:发射孔径的大小限制了GaN基超薄膜光子晶体微发光二极管的导模提取特性
机译:发射孔径的大小限制了GaN基超薄膜光子晶体微发光二极管的导模提取特性
机译:基于GaN的超薄膜发光二极管的微腔和光子晶体参数的优化,可用于高度定向的光束轮廓
机译:GaN基超薄膜转移发光二极管中光子晶体的孔形效应对导向共振模式的影响
机译:GaN基发光二极管上的光学功能结构,用于提高光提取效率和控制发射模式。
机译:通过在p-GaN表面图案化光子准晶体和n侧侧壁粗糙化来增强GaN基发光二极管的光输出功率
机译:具有光子晶体的GaN基微腔发光二极管的高方向远场发射模式的结构效应