Strain-enhanced photoluminescence from Ge direct transition

摘要

Strong enhancement of Ge direct transition by biaxial-tensile strain was observed. The reduction in band gap difference between the direct and indirect valleys by biaxial tensile strain increases the electron population in the direct valley, and enhances the direct transition. The band gap reduction in the direct and indirect valleys can be extracted from the photoluminescence spectra and is consistent with the calculations using k·p and deformation potential methods for conduction bands and valence bands, respectively.