机译:在Si上生长的shaped形Ge_(0.96)Mn_(0.04)磁性半导体
Materials Engineering, The University of Queensland, Brisbane QLD 4072, Australia;
Department of Electrical Engineering, University of California at Los Angeles, California 90095, USA;
Materials Engineering, The University of Queensland, Brisbane QLD 4072, Australia Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane QLD 4072, Australia;
Department of Electrical Engineering, University of California at Los Angeles, California 90095, USA;
Technology and Manufacturing Group External Programs, Intel Corporation, Santa Clara,California 95052, USA;
机译:在Si上生长的shaped形Ge0.96Mn0.04磁性半导体
机译:磁性质对在Si(001)上生长的Mn_(0.04)Ge_(0.96)的生长温度的依赖性
机译:Si上生长的Ge_(0.96)Mn_(0.04)磁性薄膜中的Mn行为
机译:在高温下在Si(001)上生长的GE_(0.96)Si_(0.04)的研究
机译:铁磁金属与分子束外延生长的化合物半导体之间的界面的原位表面,化学,电学表征。
机译:压电半导体和压电磁性复合杆中的磁诱导的载体分布
机译:在Si上生长的shaped形Ge0.96Mn0.04磁性半导体