机译:InGaAs / GaAs量子阱量子点隧道注入结构的时间分辨光致发光光谱
Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland;
Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland;
Institute of Physics, Wroclaw University of Technology, Wybrzeze Wyspianskiego 27, 50-370 Wroclaw, Poland;
Institute of Nanostructure Technologies and Analytics, Technische Physik, Universitaet Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany National Institute of Research and Development for Microtechnology-IMT Bucharest, Erou Iancu Nicolae 126A, 077190, Bucharest, Romania;
Institute of Nanostructure Technologies and Analytics, Technische Physik, Universitaet Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany;
Institute of Nanostructure Technologies and Analytics, Technische Physik, Universitaet Kassel, Heinrich-Plett-Str. 40, 34132 Kassel, Germany;
机译:InGaAs / GaAs量子点结构中亚润湿层状态的时间分辨光致发光光谱
机译:indaas耦合量子阱量子点结构中温度依赖性衰减时间对维度进行调查
机译:用于从量子阱到InGaAs / GaAs量子点的隧道注入来优化半导体激光器结构的光学方法
机译:基于GaAs的隧道喷射量子阱 - 量子点结构中的载波转移
机译:Igaas量子点的相干壮观= koh?怨恨不同的区别和Ingaas Pollarts
机译:温度和激发强度对InGaAs / GaAs表面量子点光致发光特性的相互作用
机译:光电应用InGaAs / GaAs量子井量子圆点结构的TEM分析