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PtSi dominated Schottky barrier heights of Ni(Pt)Si contacts due to Pt segregation

机译：由于Pt偏析，Ni（Pt）Si触点以PtSi为主的肖特基势垒高度

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摘要

Temperature dependent current-voltage measurements show that the addition of only 10% Pt to NiSi causes an increase of Schottky barrier height (SBH) from 0.65 eV for NiSi to 0.78 eV for the 10% Pt alloy. Internal photoemission measurements resolve two SBHs in all alloyed samples with >5% Pt incorporation corresponding to NiSi and PtSi (~0.68 eV and ~0.80eV), proving that each contributes independently to junction current. High angle annular dark field imaging with scanning transmission electron microscopy confirms Pt segregation to the Ni(Pt)Si/Si interface. The resulting increased SBH may therefore be detrimental to contact resistivity in future technology nodes.
机译：与温度有关的电流电压测量结果表明，仅向NiSi中添加10％的Pt会使肖特基势垒高度（SBH）从NiSi的0.65 eV增加到10％Pt合金的0.78 eV。内部光发射测量可在所有合金样品中解析出两个SBH，其中5％的Pt掺入对应于NiSi和PtSi（〜0.68 eV和〜0.80eV），证明了每个SBH独立地影响结电流。具有扫描透射电子显微镜的高角度环形暗场成像证实Pt偏析到Ni（Pt）Si / Si界面。因此，所产生的增加的SBH可能不利于未来技术节点中的接触电阻率。

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  • 来源
    《Applied Physics Letters》 |2013年第12期|123507.1-123507.3|共3页
  • 作者

    J. Chan; M. Balakchiev; A. M. Thron; R. A. Chapman; D. Riley; S. C. Song; A. Jain; J. Blatchford; J. B. Shaw; K. van Benthem; E. M. Vogel; C. L. Hinkle;

  • 作者单位

    Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson,Texas 75080, USA;

    Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson,Texas 75080, USA;

    Division of Materials Science and Engineering, University of California at Davis, Davis, California 95616,USA;

    Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson,Texas 75080, USA;

    Advanced CMOS, Texas Instruments Incorporated, Dallas, Texas 75243, USA;

    Advanced CMOS, Texas Instruments Incorporated, Dallas, Texas 75243, USA;

    Advanced CMOS, Texas Instruments Incorporated, Dallas, Texas 75243, USA;

    Advanced CMOS, Texas Instruments Incorporated, Dallas, Texas 75243, USA;

    Advanced CMOS, Texas Instruments Incorporated, Dallas, Texas 75243, USA;

    Division of Materials Science and Engineering, University of California at Davis, Davis, California 95616,USA;

    School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, USA;

    Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson,Texas 75080, USA;

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