Hydrogen Annealing of PtSi-Si Schottky Barrier Contacts

机译：ptsi-si肖特基势垒接触的氢退火

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Schottky barrier PtSi-Si diodes formed by ultrahigh vacuum deposition and

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Tsaur, B. Y.; Mattia, J. P.; Chen, C. K.;
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年度 1990
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总页数 4
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Annealing; Schottky barrier devices; Semiconductor diodes; Defects(Materials); Diodes; Electric current; Electrical measurement; Hydrogen; Interfaces; Liquid nitrogen; N type semiconductors; P type semiconductors; Passivity; Substrates; Temperature; Ultra;

机译：退火;肖特基势垒器件;半导体二极管;缺陷（材料）;二极管;电流;电气测量;氢;界面;液氮; N型半导体; p型半导体;无源;基板;温度;超;

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专利

1. Effects of the barrier metal thickness and hydrogen pre-annealing on the characteristic parameters of Au-GaAs metal-semiconductor Schottky contacts [J] . OE. Guellue, M. Biber, R.L. Van Meirhaeghe, Thin Solid Films . 2008,第21期

机译：势垒金属厚度和氢预退火对Au / n-GaAs金属半导体肖特基接触特征参数的影响
2. lon-bombardment effects on PtSi-Si Schottky contacts studied by ballistic electron emission microscopy [J] . Guo-Ping Ru, xin-Ping Qu, Shi-Yang Zhu Journal of Vacuum Science & Technology. B, Microelectronics Processing and Phenomena . 2000,第4期

机译：弹道电子发射显微镜研究离子轰击对PtSi / n-Si肖特基接触的影响
3. Microwave PtSi-Si Schottky-barrier-detector diode fabrication using an implanted active layer on high-resistivity silicon substrate [J] . Yunghong Wu, Armstrong B.M. IEEE Transactions on Microwave Theory and Techniques . 1998,第5期

机译：使用高电阻率硅衬底上植入的有源层的微波PtSi-Si肖特基势垒检测器二极管制造
4. Annealing effects of schottky contacts on the characteristics of 4H-SiC schottky barrier diodes [C] . S.C. Kang, B.H. Kum, S.J. Do, Symposium on Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications-1999 held April 5-8, 1999, San Francisco, California, U.S.A. . 1999

机译：肖特基接触对4H-SiC肖特基势垒二极管特性的退火效应
5. Toward understanding the electrical properties of metal/semiconductor Schottky contacts: The effects of barrier inhomogeneities and geometry in bulk and nanoscale structures. [D] . Sarpatwari, Karthik. 2009

机译：理解金属/半导体肖特基接触的电性能：块体和纳米级结构中势垒不均匀性和几何形状的影响。
6. Tuning of Schottky Barrier Height at NiSi/Si Contact by Combining Dual Implantation of Boron and Aluminum and Microwave Annealing [O] . Feng Sun, Chen Li, Chaochao Fu, 2018

机译：硼铝双重注入与微波退火相结合对NiSi / Si接触处肖特基势垒高度的调节
7. High‐temperature annealing characteristics of tungsten and tungsten nitride Schottky contacts to GaAs under different annealing conditions [O] . Kin Man Yu, J. M. Jaklevic, E. E. Haller, 1988

机译：不同退火条件下GaAs钨和钨氮化钨梭触头的高温退火特性
8. Effects of Interface Structure on the Electrical Characteristics of PtSi-Si Schottky Barrier Contacts. [R] . Tsaur, B. Y., Silversmith, D. J., Mountain, R. W., 1982

机译：界面结构对ptsi-si肖特基势垒接触电性能的影响。

Hydrogen Annealing of PtSi-Si Schottky Barrier Contacts

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