Influence of scandium concentration on power generation figure of merit of scandium aluminum nitride thin films

摘要

The authors have investigated the influence of scandium concentration on the power generation figure of merit (FOM) of scandium aluminum nitride (Sc_xAl_(1-x)N) films prepared by cosputtering. The power generation FOM strongly depends on the scandium concentration. The FOM of Sc_(0.41)Al_(0.59)N film was 67GPa, indicating that the FOM is five times larger than that of AIN. The FOM of Sc_(0.41)Al_(0.59)N film is higher than those of lead zirconate titanate and Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3 films, which is the highest reported for any piezoelectric thin films. The high FOM of Sc_(0.41)Al_(0.59)N film is due to the high d_(31) and the low relative permittivity.