机译:相邻的蓝宝石衬底对通过金属有机化学气相沉积法生长的N极GaN薄膜性能的影响
Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China;
Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China;
Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China;
Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China;
Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China;
Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China;
Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China;
School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, Shaanxi 710071, China;
Key Lab of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, Shaanxi 710071, China;
机译:衬底取向错误对通过金属有机化学气相沉积法生长的N极GaN薄膜性能的影响
机译:等离子体辅助分子束外延在金属有机化学气相沉积-GaN / c-蓝宝石衬底上生长的GaN薄膜中的应力和缺陷的衰减
机译:通过脉冲激光沉积和金属有机化学气相沉积相结合在r面蓝宝石衬底上生长的高质量非极性a面GaN外延膜
机译:等离子体辅助金属化学气相沉积法研究C面蓝宝石衬底上生长的Mg掺杂GaN薄膜的研究
机译:通过固体源金属有机化学气相沉积法生长的外延氧化物薄膜。
机译:金属有机化学气相沉积在蓝宝石衬底上生长的低Al成分p-GaN / Mg掺杂Al0.25Ga0.75N / n + -GaN极化诱导的反向隧穿结
机译:通过金属有机化学气相沉积法在邻近蓝宝石衬底上生长N极性GaN
机译:衬底温度和氢稀释比对热线化学气相沉积法生长纳米硅薄膜性能的影响