机译:MoS_2功能化用于超薄原子层沉积电介质
Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USA;
Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USA;
Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USA;
Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USA;
Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USA;
Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USA;
Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USA;
Department of Electrical Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USA;
Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USA;
Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USA,Department of Electrical Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USA;
Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USA;
Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USA;
Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, USA;
机译:在没有表面功能化的情况下,在顶部栅极MoS_2晶体管上的亚10纳米高K栅极电介质的原子层沉积
机译:通过插入超薄原子层沉积的高k电介质来降低金属/ n-InP的肖特基势垒高度
机译:通过插入超薄原子层沉积的高k电介质来降低金属/ n-InP的肖特基势垒高度
机译:使用石墨烯的臭氧功能化原子层沉积Al
机译:化学和原子层沉积介电材料的加工对硅的影响
机译:膜厚对原子层沉积超薄TiO2薄膜气敏特性的影响
机译:通过超薄介电层的原子层沉积改善环境空气中聚合物太阳能电池的稳定性