Formation of shallow boron emitters in crystalline silicon using flash lamp annealing: Role of excess silicon interstitials

摘要

Shallow, Boron (B)-doped p~+ emitters have been realized using spin-on deposition and Flash Lamp Annealing (FLA) to diffuse B into monocrystalline float zone Silicon (Si). The emitters extend between 50 and 140 nm in depth below the surface, have peak concentrations between 9 × 10~(19) cm~(-3) and 3 × 10~(20)cm~(-3), and exhibit sheet resistances between 70 and 3000 Ω/□. An exceptionally large increase in B diffusion occurs for FLA energy densities exceeding ～93 J/cm~2 irrespective of 10 or 20 ms pulse duration. The effect is attributed to enhanced diffusion of B caused by Si interstitial injection following a thermally activated reaction between the spin-on diffusant film and the silicon wafer.