机译:有和没有局部电离区的高功率脉冲磁控溅射中的离子能
School of Materials Science and Engineering, State Key Lab for Materials Processing and Die and Mold Technology, Huazhong University of Science and Technology, Wuhan 430074, China,Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA;
Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA,Central Research Institute, Mitsubishi Materials Corporation, 1002-14 Mukohyama, Naka-shi, Ibaraki 311-0102, Japan;
Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA,Department of Physics, University of California Berkeley, Berkeley, California 94720, USA;
Lawrence Berkeley National Laboratory, 1 Cyclotron Road, Berkeley, California 94720, USA;
机译:高功率脉冲磁控溅射中电离区的磁场影响
机译:电离区中的漂移势峰:大功率脉冲磁控溅射的“螺旋桨叶片”
机译:电离失控的漂移局部化:揭示高功率脉冲磁控溅射中异常传输的性质
机译:外部磁场辅助大功率脉冲磁控溅射的较高电离和沉积速率
机译:用于互连金属化的高功率脉冲磁控溅射和调制脉冲功率溅射的比较。
机译:大功率脉冲磁控溅射镍薄膜的斜角沉积
机译:电离区域中的电子加热:超越磁控溅射的Penning-Thornton范式