机译:碳纳米管和碳化硅界面处的肖特基势垒高度非常低
Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan;
Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan;
Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan;
Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan;
EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603, Japan;
EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603, Japan;
EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603, Japan;
Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041, Japan;
EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa, Nagoya 464-8603, Japan;
Faculty of Science and Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan,Institute for Nanoscience and Nanotechnology, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041, Japan,The Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051, Japan;
机译:肖特基势垒高度对Pd-碳纳米管接触的碳纳米管直径的依赖性
机译:氩气轰击4H碳化硅基材,用于定制肖特基二极管屏障高度
机译:肖特基势垒高度对碳化硅的反向偏置依赖性:温度和施主浓度的影响
机译:氩气轰击4H碳化硅基板,用于定制肖特基二极管屏障高度
机译:通过低电负性原子夹层对硅肖特基势垒高度进行系统调节。
机译:基于碳纳米管和碳化硅纳米管的药物输送系统分子学研究用于包裹铂基抗癌药物
机译:用于硅基肖特基势垒二极管的印刷银电极:AG / P-Si接口使能的高整流比率超过理论屏障高度
机译:利用导纳技术测量Gaas肖特基势垒的界面态:与势垒高度不稳定性的关系