Conductance quantization in an AgInSbTe-based memristor at nanosecond scale

摘要

Quantized conductance was observed in a cation-migration-based memristor with the structure of Ag/AgInSbTe(AIST)/Ta. The conductance of the memristor exhibits stepwise increases in units of single quantum conductance (77.5 μS), which is attributed to the formation of a metal filament with an atomic contact of different integer multiples. We designed a high speed circuit to conduct the pulse measurement. The quantized conductance can be obtained by applying voltage pulses in intervals as fast as 3 ns with constant amplitude. Considering that the quantized conductance can be modulated by different pulse widths, our results suggest that the AIST-based memristor is a robust candidate for multi-level data storage and neuromorphic computing systems.