Defect localization of metal interconnection lines in 3-dimensional through-silicon-via structures by differential scanning photocapacitance microscopy

摘要

We report a differential scanning photocapacitance microscopy technique based on the detection of light-induced capacitance changes allowing mapping of metal interconnection line defects in through-silicon-via (TSV) structures used in three-dimensional (3-D) integration technology. Due to the photosensitive silicon depletion capacitance, observation of the photocapacitance response enables non-destructive two-dimensional (2-D) visualization of metallization line ruptures in TSV structures. We demonstrate the application of the proposed method on a TSV chain structure and reveal the location of the open metallization rupture. Published by AIP Publishing.