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Q-Factor Enhancement of Thin-Film Piezoelectric-on-Silicon MEMS Resonator by Phononic Crystal-Reflector Composite Structure

机译:Q-系数提高薄膜压电对硅MEMS谐振器通过呼吸晶体反射器复合结构

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摘要

Thin-film piezoelectric-on-silicon (TPoS) microelectromechanical (MEMS) resonators are required to have high Q-factor to offer satisfactory results in their application areas, such as oscillator, filter, and sensors. This paper proposed a phononic crystal (PnC)-reflector composite structure to improve the Q factor of TPoS resonators. A one-dimensional phononic crystal is designed and deployed on the tether aiming to suppress the acoustic leakage loss as the acoustic wave with frequency in the range of the PnC is not able to propagate through it, and a reflector is fixed on the anchoring boundaries to reflect the acoustic wave that lefts from the effect of the PnC. Several 10 MHz TPoS resonators are fabricated and tested from which the Q-factor of the proposed 10 MHz TPoS resonator which has PnC-reflector composite structure on the tether and anchoring boundaries achieved offers a loaded Q-factor of 4682 which is about a threefold improvement compared to that of the conventional resonator which is about 1570.
机译:薄膜压电对硅(TPOS)微机电(MEMS)谐振器需要具有高Q系数,以提供其应用领域的令人满意的结果,例如振荡器,过滤器和传感器。本文提出了一种帖子晶体(PNC) - 重型复合结构,以改善TPOS谐振器的Q系数。一维声晶晶体设计并展开,旨在抑制由于PNC范围内的频率的声波不能通过它,并且反射器固定在锚定边界上的声波。反射从PNC效果中留下的声波。制造和测试了几种10MHz TPOS谐振器,其中提出的10MHz TPOS谐振器的Q系数,其在所达到的系绳上具有PNC反光复合结构和锚定边界的Q系数提供了4682的负载Q系数,这是关于三倍的改进与大约1570的传统谐振器相比。

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