Self-Filtering Monochromatic Infrared Detectors Based on Bi2Se3 (Sb2Te3)/Silicon Heterojunctions

摘要

This paper focuses on the photoelectric properties of heterostructures formed by surface-modified Si (111) and hexagonal, quintuple-layered selenides (Bi Se and Sb Te ). It was shown that H-passivated Si (111) can form robust Schottky junctions with either Bi Se or Sb Te . When back illuminated (i.e., light incident towards the Si side of the junction), both the Bi Se /Si and Sb Te /Si junctions exhibited significant photovoltaic response at 1030 nm, which is right within the near-infrared (NIR) light wavelength range. A maximum external quantum efficiency of 14.7% with a detection response time of 2 ms for Bi Se /Si junction, and of 15.5% with a 0.8 ms response time for the Sb Te /Si junction, were achieved. Therefore, utilizing Si constituents as high-pass filters, the Bi Se (Sb Te )/Si heterojunctions can serve as monochromatic NIR photodetectors.