用于红外探测的短周期InAs/GaSb超晶格材料的生长

摘要

The InAs/GaSb superlattice were prepared by metal organic chemical vapor deposition (MOCVD) on GaSb substrate. The optimized thickness and the various growth parameters were explored as well as the importance of source flux control. The photoluminescence (PL) spectra, x-ray diffraction data (XRD) and the surface topography map showed that the superlattice can response to incident light with long wavelength of 10 |un, and has good surface morphology and epitaxial layer quality.%用金属有机物化学气相淀积法(MOCVD)在GaSb衬底上生长InAs/GaSb超晶格,探索了最佳的生长厚度,优化了各种生长参数,并且分析了源流量控制的重要性.得到的超晶格材料的光致发光(PL)谱、X射线双晶衍射图以及表面形貌图表明,生长的超晶格材料可以响应10μm的长波,且具有良好的表面形貌和外延层质量.