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High-Performance Anodic Vulcanization-Pretreated Gated P+–π–M–N+ InAs/GaSb Superlattice Long-Wavelength Infrared Detector

机译：高性能阳极硫化 - 预处理门控P + -IN-M-N + INAS / GASB超晶格长波长红外探测器

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摘要

The epitaxial structure and band alignment of the materials with different π region doping levels

机译：具有不同π区掺杂水平的材料的外延结构和带对准

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期刊名称 Nanoscale Research Letters
作者
Ju Sun; Nong Li; Qing-Xuan Jia; Xuan Zhang; Dong-Wei Jiang; Guo-Wei Wang; Zhi-Chuan Niu;
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作者单位

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年(卷),期 2021(-1),-1
年度 2021
页码 -1
总页数 8
原文格式 PDF
正文语种
中图分类生化遗传学;生化药理学;
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机译：PI.;

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专利

1. High-Performance Long-Wavelength InAs/GaSb Superlattice Detectors Grown by MOCVD [J] . Teng Yan, Zhao Yu, Wu Qihua, IEEE Photonics Technology Letters . 2019,第2期

机译：MOCVD生长的高性能长波长InAs / GaSb超晶格探测器
2. Impact of conductivity type change in InAs/GaSb superlattice on low frequency noise of photoconductive long-wavelength infrared detectors [J] . Lukasz Ciura, Agata Jasik, Krzysztof Czuba Applied Physics Letters . 2021,第26期

机译：INAS / GASB超晶格在光电导长波长红外探测器低频噪声中的影响
3. InAs/GaSb superlattice based long-wavelength infrared detectors: Growth, processing, and characterization [J] . Soibel A., Nguyen J., H?glund L., Infrared physics and technology . 2011,第3期

机译：基于InAs / GaSb超晶格的长波长红外探测器：生长，加工和表征
4. High-Performance Bias-selectable Dual-band Mid-/Long-wavelength Infrared Photodetectors and Focal Plane Arrays based on InAs/GaSb Type-Ⅱ Superlattices [C] . M. Razeghi, A. Haddadi, A.M. Hoang, Conference on infrared technology and applications . 2013

机译：基于InAs / GaSbⅡ型超晶格的高性能偏置可选双波段中/长波长红外光电探测器和焦平面阵列
5. Type-II InAs/GaSb Superlattices Infrared Photodetector Optimization and Gated Photodetector Array Realization. [D] . Chen, Guanxi Andy. 2015

机译：II型InAs / GaSb超晶格红外光电探测器优化和门控光电探测器阵列实现。
6. Growth and fabrication of InAs/GaSb type II superlattice mid-wavelength infrared photodetectors [O] . Jianxin Chen, Qingqing Xu, Yi Zhou, 2011

机译：InAs / GaSb II型超晶格中波长红外光电探测器的生长与制备
7. Impact of conductivity type change in InAs/GaSb superlattice on low frequency noise of photoconductive long-wavelength infrared detectors [O] . Łukasz Ciura, Agata Jasik, Krzysztof Czuba 2021

机译：INAS / GASB超晶格中电导率变化对光电导长波长红外探测器低频噪声的影响
8. Performance Improvement of Long-Wave Infrared InAs/GaSb Strained-Layer Superlattice Detectors Through Sulfur-Based Passivation. [R] . Plis, E. A., Kutty, M. N., Myers, S., 2012

机译：通过硫基钝化改善长波红外Inas / Gasb应变层超晶格探测器的性能。

High-Performance Anodic Vulcanization-Pretreated Gated P+–π–M–N+ InAs/GaSb Superlattice Long-Wavelength Infrared Detector

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