Short-period InAs/GaSb superlattices for mid-infrared photodetectors

摘要

Using a newly developed envelope function approximation model that includes interface effects, several InAs/GaSb type-Ⅱ superlattices (SLs) were designed for uncooled mid-infrared detector applications. The 4 micron cutoff could be achieved with several SL designs. Superlattices with shorter periods have larger intervalence band separations than larger-ones, which could increase the optical signal and reduce the detector noise, thus making room temperature operation possible. To test these possibilities, several short-period SLs were grown by molecular-beam epitaxy and their optical properties with reducing SL period were studied by band-edge absorption, photoconductivity and photoluminescence measurements.