退火处理对W:Bi4Ge3O12和Bi12GeO20晶体发光性能的影响

摘要

W: Bi4Ge3012 and Bi12GeO20 crystals were prepared by Czochralski(Cz) method. Hie absorption, photo-luminescence (PL) and PL lifetime spectra were investigated. The results revealed the PL intensity of W: Bi4Ge3O12 was stronger than that of Bi12 GeO20, and annealing in N2 can increase the PL intensity of W: Bi4Ge3O12. Near infrared PL (at about 745 nm) was observed in Bi12GeO20, annealed in N2, and the lifetime was about 10μs. The mechanisms of luminescence in W: Bi4Ge3O12 and annealed Bi12GeO20, was discussed.%通过提拉法制备了W:Bi4 Ge3 O12和Bi12GeO20晶体,测试了晶体的吸收光谱、光致发光谱和发光衰减时间等.W:Bi4 Ge3 O12的可见光发光强度比纯Bi4 Ge3 O12有所增强,而且N2中退火处理对W:Bi4Ge3O12发光有进一步增强作用.Bi12GeO20在N2中退火处理后在745 nm附近有发光峰,其衰减时间为10μs左右.两种晶体退火处理后发光均增强,认为是低价Bi离子发光所致.