红色 Bi4Ge3O12晶体在低温下的发光性能

摘要

用下降法制备了Bi4Ge3O12晶体,发现生长出来的圆柱状晶体外侧呈现淡红色.对红色Bi4Ge3O12晶体进行了低温(至8K)下的近红外发射光谱及衰减寿命等测试分析.发现低温时(200 K以下)红色Bi4Ge3O12在1150 nm等波长处有较强的发射峰,强度随温度降低而增强,衰减时间为几百μs.%Red Bi4Ge3O12(BGO) single crystals had been grown by vertical Bridgman (VB) method. The luminescence and decay time in the near infrared (NIR) region were measured at temperature of 8 K, A broad emission band was found at around 1 150 nm at T < 200 K, and the luminescence lifetime was measured to be several hundred microseconds. The decreased temperature led to increased luminescence intensity.