体硅互补型金属-氧化物-半导体集成电路含有寄生4层可控硅结构，当工作在瞬时γ射线脉冲辐射环境下时易发生闩锁，导致电路失效，甚至烧毁，所以电路防闩锁研究意义重大。本文通过求解寄生晶体管中少数载流子连续性方程的方法，分析了辐射光电流在寄生4层可控硅结构中的持续时间，提出了集成电路自洽防闩锁的条件，并得到了自洽防闩锁条件随γ射线剂量率的变化关系。对4层可控硅等效电路和体硅集成电路分别进行了瞬时辐射实验，实验结果与理论分析结果基本一致，验证了理论分析的正确性。%Bulk complementary metal-oxide-semiconductor (CMOS) integrated circuits contain the parasitic silicon-controlled-rectifier (SCR) structure ,which tend to latch-up ,even burn out ,when they are exposed to transient gamma irradiation .Therefore ,it is significant to study latch-up prevention . The continuity equation based on the minority carrier in parasitic transistors was solved ,the duration of photocurrent in the SCR structure was calculated , and the condition of auto-feed-back preventing the devices’ latch-up was confirmed .Moreover ,the relationship of the condition and dose rate was concluded .Two kinds of circuits which were SCR’s equivalent circuit and CMOS circuit were irradiated by transient gamma rays .The experimental results match the theoretical results well .
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