缺陷分布对Ag-SiO2薄膜电阻翻转效应的影响

摘要

通过改变制备条件，研究了Ag-Si02薄膜中的缺陷对电阻翻转效应的影响．对比不同的热处理实验条件，发现在120℃退火的样品经forming过程后具有稳定的电阻转变特性；另一方面，在Ar／O2混合气氛下生长的SiO2具有比在纯Ar下生长的样品更加稳定、重复的电阻转变特性．通过实验分析，表明热处理、电场作用和样品制备气氛可以改变、调节样品中的缺陷分布（Ag填隙原子和氧空位缺陷），从而导致Ag-Si02中基于缺陷的导电通道结构的形成和湮灭，提出了提高电阻翻转稳定性的不要条件。%Influences of dislocation distribution on the resistive switching effect of Ag doped SiO2 thin film are investigated under different sample preparation conditions. Stable resistance switching characteristics are observed for the samples annealed at 120℃ and prepared in Ar/O2 mixed atmosphere. It is shown that annealing process, electric field formation and atmosphere of preparation can change the intensity and the distribution of the dislocations （Ag interstitial atoms and oxygen vacancies） in the Ag-SiO2 structure, which leads to the resistive switching effect based on the formation and annihilation of the conducting filaments.