6H-SiC反型层电子迁移率的Monte Carlo模拟

摘要

用单电子MonteCarlo方法对6H-SiC反型层的电子迁移率进行了模拟，在模拟中采用了一种新的综合的库仑散射的模型，该模型考虑了栅氧化层电荷、界面态电荷、沟道电离杂质电荷的作用以及它们之间的相关性.MonteCarlo模拟的结果表明，当表面有效横向电场高于1.5×105V/cm时，表面粗糙散射在SiC反型层中起主要作用，而当有效横向电场小于该值时，沟道散射以库仑散射为主.%Monte Carlo analysis of inversion layer mobility in 6H-SiC metaloxide semiconductors is presented under the size quantization.The simulation results fit experimental data very well.A new comprehensive model for Coulomb scattering in inversion layers is developed in this paper.The model takes into account the effect of the fixed charge in insulator,the interface-state charge,the charge of the ionized impurities and their correlation.Interface roughness scattering is shown to play a strong role in the high effective transverse field.On the low effective transverse field side,Coulomb scattering becomes important.