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Stability and performance of wafer-scale thin-film encapsulated MEMS resonators.

机译:晶圆级薄膜封装的MEMS谐振器的稳定性和性能。

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Silicon resonator is one of the most promising devices due to their potential application as frequency references in electronic circuits. Reduced size and batch fabrication will make silicon resonators cost effective compared to quartz oscillators which are most widely used as circuit frequency references. While there have been many breakthroughs in the field of MEMS resonators, the problem of packaging is yet to be solved. The stability of the resonant frequency over time is absolutely essential for use as a frequency reference, and the frequency stability depends on the quality of the package environment.; This work presents the stability and performance of MEMS resonators packaged in a wafer-scale thin-film encapsulation process, called 'epi-seal'. This encapsulation is formed by depositing polycrystalline silicon in a CMOS-clean and extremely high temperature (∼980°C) environment. The mechanical robustness of the encapsulation provides MEMS resonators with extremely high yield even after harsh post processing, such as wafer sawing and wire bonding.; During more than one year of operation, resonant frequencies of these encapsulated resonators were stable to ppm levels of drift. This high level of stability was achieved by the cleanliness and hermeticity of the 'epi-seal' encapsulation. For further optimization of encapsulation design, diffusive gas species and diffusion paths were investigated by a 400°C accelerated diffusion experiment.; In addition, other efforts to develop commercial level high performance MEMS resonators are presented. Quality Factor, Q, is a description of the energy loss of resonators, which is very important for designing oscillator circuits with the resonators. The temperature dependence of various energy losses is investigated. The quality factors of MEMS resonators can be engineered to be either strong or weak functions of temperature. Especially for 'oven-based' active temperature compensation, strongly temperature dependent Q can be used as an effective, direct, and delayless measure of the temperature of the resonators.; To achieve temperature stability, silicon dioxide, which becomes stiffer as temperature increases while silicon becomes softer, can be used as a compensating material. Si-SiO2 composite resonators were successfully fabricated inside a modified 'epi-seal' encapsulation. These encapsulated Si-SiO 2 composite resonators showed more than 20x improvement in temperature stability.
机译:硅谐振器是最有前途的设备之一,因为它们有可能在电子电路中用作频率参考。与最广泛用作电路频率基准的石英振荡器相比,减小尺寸和批量制造将使硅谐振器具有成本效益。尽管在MEMS谐振器领域有许多突破,但是封装问题仍未解决。谐振频率随时间的稳定性对于用作频率基准绝对必不可少,并且频率稳定性取决于封装环境的质量。这项工作展示了以晶圆级薄膜封装工艺(称为“上封”)封装的MEMS谐振器的稳定性和性能。这种封装是通过在CMOS清洁且极高的温度(〜980°C)环境中沉积多晶硅来形成的。封装的机械鲁棒性为MEMS谐振器提供了极高的良率,即使经过苛刻的后处理(如晶圆锯切和引线键合)也是如此。在运行的一年多时间内,这些封装谐振器的谐振频率稳定在ppm级的漂移。这种高水平的稳定性是通过“上密封”封装的清洁度和气密性实现的。为了进一步优化封装设计,通过400°C加速扩散实验研究了扩散气体的种类和扩散路径。此外,还提出了开发商用级高性能MEMS谐振器的其他努力。品质因数Q是谐振器能量损耗的描述,这对于设计带有谐振器的振荡器电路非常重要。研究了各种能量损失的温度依赖性。可以将MEMS谐振器的品质因数设计为强或弱的温度函数。特别是对于“基于烤箱的”有源温度补偿,强烈依赖温度的Q可以用作谐振器温度的有效,直接和无延迟的度量。为了获得温度稳定性,可以使用二氧化硅作为补偿材料,二氧化硅随着温度升高而变硬,而硅变得较软。 Si-SiO2复合谐振器在改进的“表封”封装内成功制造。这些封装的Si-SiO 2复合谐振器的温度稳定性提高了20倍以上。

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