首页> 外文会议>VLSI Design, Automation and Test, 2009. VLSI-DAT '09 >Low-power 48-GHz CMOS VCO and 60-GHz CMOS LNA for 60-GHz dual-conversion receiver
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Low-power 48-GHz CMOS VCO and 60-GHz CMOS LNA for 60-GHz dual-conversion receiver

机译:适用于60 GHz双转换接收器的低功耗48 GHz CMOS VCO和60 GHz CMOS LNA

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A low-power low-phase-noise 48-GHz CMOS LC voltage-control oscillator (VCO) and a low-power 60-GHz CMOS low-noise amplifier (LNA) for 60-GHz dual-conversion receiver are reported. The VCO dissipated 5.556 mW power, and achieved state-of-the-art phase noise of -105 dBc/Hz at 1-MHz offset from 47.84 GHz. The corresponding figure-of-merit (FOM) was -191.1 dBc/Hz, which is better than those of the reported CMOS LC VCOs around 48 GHz in the literature. Besides, the LNA consumed 21.4 mW power, and achieved input return loss (S11) of -10.6~ -37.4 dB, voltage gain (AV) of 10.7~ 18.8 dB, reverse isolation (S12) of -43.5~ -48.1 dB, input referred 1-dB compression point (P1dB-in) of -16.2~ -20.8 dBm, and input third-order inter-modulation point (IIP3) of -4~ -7.5 dBm over the 57-64-GHz-band of interest.
机译:报告了用于60 GHz双转换接收器的低功率低相位噪声48 GHz CMOS LC压控振荡器(VCO)和低功率60 GHz CMOS低噪声放大器(LNA)。 VCO耗散了5.556 mW的功率,并且在从47.84 GHz偏移1 MHz时达到了-105 dBc / Hz的最新相位噪声。相应的品质因数(FOM)为-191.1 dBc / Hz,优于文献中报道的48 GHz附近的CMOS LC VCO。此外,LNA消耗了21.4 mW的功率,并实现了-10.6〜-37.4 dB的输入回波损耗(S 11 ),电压增益(A V )为10.7〜18.8。 dB,反向隔离(S 12 )为-43.5〜-48.1 dB,输入参考的1-dB压缩点(P 1dB-in )为-16.2〜-20.8 dBm ,并在目标57-64 GHz频带上输入-4〜-7.5 dBm的三阶互调点(IIP3)。

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