首页> 外文会议>VLSI Design, Automation and Test, 2009. VLSI-DAT '09 >A 6-bit 220-MS/s time-interleaving SAR ADC in 0.18-µm digital CMOS process
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A 6-bit 220-MS/s time-interleaving SAR ADC in 0.18-µm digital CMOS process

机译:一个0.18 µm数字CMOS工艺的6位220-MS / s时间交织SAR ADC

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This paper reports a 6-bit 220-MS/s time-interleaving successive approximation register analog-to-digital converter (SAR ADC) for low-power low-cost CMOS integrated systems. The major concept of the design is based on the proposed set-and-down capacitor switching method in the DAC capacitor array. Compared to the conventional switching method, the average switching energy is reduced about 81%. At 220-MS/s sampling rate, the measured SNDR and SFDR are 32.62 dB and 48.96 dB respectively. The resultant ENOB is 5.13 bits. The total power consumption is 6.8 mW. Fabricated in TSMC 0.18-mum 1P5M digital CMOS technology, the ADC only occupies 0.032 mm2 active area.
机译:本文报告了一种用于低功耗低成本CMOS集成系统的6位220-MS / s时间交织逐次逼近寄存器模数转换器(SAR ADC)。设计的主要概念是基于DAC电容器阵列中提出的设置和降低电容​​器开关方法。与传统的开关方法相比,平均开关能量降低了约81%。在220-MS / s的采样率下,测得的SNDR和SFDR分别为32.62 dB和48.96 dB。结果ENOB为5.13位。总功耗为6.8 mW。 ADC采用台积电0.18-um 1P5M数字CMOS技术制造,仅占用0.032 mm 2 有源区域。

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