Low Temperature Deposition of Zinc Oxide Films

摘要

A detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O_2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied. For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.1 x 10~(-3) Ωcm, and that for Al-doped films was 8x10~(-4) Ωcm. The carrier concentration was found to increase with Al doping.