Gas-phase reaction in epitaxial growth of SiC films by chemical vapor deposition from SiH_4 and C_3H_8

摘要

An analytical method named "Macro/microcavity (MMC)" was applied to investigate the film formation mechanism to form p-SiC films by the atmospheric chemical vapor deposition (APCVD) from the reaction of SiH_4 and C_3H_8 in H_2. The result suggested that multiple species contribute to the film growth in this reaction system. The possible film precursors contain SiH_2, a gas-phase intermediate derived from SiH_4, and a species containing Si and C derived from SiH_2 and C_3H_8.