Oxidation of 3C and 6H-SiC in N_2O

摘要

Thermal oxidation kinetics of 3C and 6H-SiC in N_2O have been studied. The oxidation rate follows a parabolic-linear fit that is similar to oxidation of silicon in N_2O. The activation energies of the parabolic rate constant (B) is 3.1 eV/mol for 3C-SiC. and 4.80 eV/hiol for 6H-SiC. The limiting mechanism for oxidation is attributed to the diffusion of CO through the oxynitride layer. 3C-SiC MOS capacitors fabricated in N_2O exhibit lower fixed oxide charge densities than those oxidized in steam.