Investigation of the Metal-insulator Transition in n-3C-SiC Epitaxial Films

摘要

N-type 3C-SiC films have been grown by sublimation epitaxy on hexagonal silicon carbide substrates. The low-temperature conductivity and magnetoresistance of the films have been studied in relation to their doping level and structural perfection. It was found that a metal-insulator transition occurs in the n-3C-SiC layer at concentrations N_d - N_a ≤ 3 10~(17) cm~(-3).