100 Amp, 1000 Volt Class 4H- Silicon Carbide MOSFET Modules

摘要

The development of large area, up to 70mΩ/1kV (0.45cm × 0.45cm) 4H-SiC vertical DMOSFETs is presented. DC and switching characteristics of high-current, 100Amp All-SiC power switching modules are demonstrated using 0.45cm × 0.225cm DMOSFET die and commercial Schottky diodes. The switching performance from room temperature up to T=200℃ of the All-SiC modules is presented, with as much as ten times lower losses than co-fabricated Si-based modules using commercial IGBTs.