SiC microwave power transistors

摘要

This work describes the fabrication and testing of SIT and MESFET power transistors in 6H- and 4H-SiC. 6H-SiC power MESFETs delivered 3.5 W output power at 6 GHz with a power added efficiency of 45.5% and an associated gain of 6dB. Under small signal conditions, 6H-SiC MESFETs show an f_(max) of 25 GHz and 4H-SiC MESFETs show an f_(max) of 42 GHz. In the first power measurements of 4H-SiC SITs, a 4.75 cm periphery SIT delivered 57W of pulse power with a power added efficiency of 43% and an associated gain of 12dB at 500MHz.