Defect Reduction of Ge on Si by Selective Epitaxy and Hydrogen Annealing

摘要

We demonstrate a promising approach for the monolithicrnintegration of Ge-based nanoelectronics and nanophotonics withrnSilicon: the selective deposition of Ge on Si by Multiple HydrogenrnAnnealing for Heteroepitaxy (MHAH). Very high quality Gernlayers can be selectively integrated on Si CMOS platform with thisrntechnique. We confirm the reduction of dislocation density in Gernlayers using AFM surface morphology study. In addition, in siturndoping of Ge layers is achieved and MOS capacitor structures arernstudied.