Si and SiGe Epitaxy in Perspective

摘要

Fifty years of Si and SiGe epitaxy in the semiconductor industryrnand twenty-five since the conception of the present generation ofrnindustrial epi reactors suffice to justify a review of the evolutionrnand the status of the technology. Although there has been veryrnlittle change in the reactor design, the epi process progressedrnsignificantly. The strengths and weaknesses of the currentrntechnology are discussed with an emphasis on possiblernimprovements.