Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, P. O. Box 912, Beijing 100083, China;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, P. O. Box 912, Beijing 100083, China;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, P. O. Box 912, Beijing 100083, China;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, P. O. Box 912, Beijing 100083, China;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, P. O. Box 912, Beijing 100083, China;
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Science, P. O. Box 912, Beijing 100083, China;
butt-coupled; DBR laser; gas sensing; InGaAs/InP; integration; tunable laser;
机译:InGaAsP-InP埋入异质结构光放大器与反应性离子刻蚀的单片对接波导之间的均匀且高耦合效率
机译:两步栅极凹陷过程结合了选择性湿法蚀刻和数字湿法蚀刻,用于Inalas / InGaAs基于INP的垫圈
机译:两步栅凹工艺,用于基于InAl的InAl基HEMT的选择性湿法刻蚀和数字湿法刻蚀
机译:成功地利用CH / sub 4 // H / sub 2 / RIE来制造具有对接耦合无源波导的1.3 / spl mu / m InGaAsP / InP集成激光器
机译:通过聚焦离子束诱导的选择性混合和湿法化学蚀刻形成光通道波导:设计,制造和表征。
机译:InGaAs / InAlAs / InP量子级联激光器的In0.52Al0.48As波导层MBE生长条件的优化
机译:InGaASP / INP多量子阱埋脊波导激光二极管的制造与表征
机译:利用原位监测反应离子刻蚀制备低阈值InGaas / Gaas脊波导激光器