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Optical channel waveguide formation by focused ion beam induced selective mixing and wet chemical etching: Design, fabrication and characterization.

机译:通过聚焦离子束诱导的选择性混合和湿法化学蚀刻形成光通道波导:设计,制造和表征。

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摘要

ptical channel waveguides were fabricated for the first time in multiple quantum well (MQW) samples using selective mixing induced by focused ion beam implantation and subsequent rapid thermal annealing. The fabrication parameters were optimized using photoluminescence characterization. The channel waveguides were characterized at ;Wet chemical etching formulations and techniques were developed for fabrication of low loss ridge optical waveguides by shallow etching in GaAs/AlGaAs and InP samples. Using these techniques, channel waveguides of various widths were fabricated on uniform core AlGaAs heterostructures, and characterized at ;Ridge waveguides were fabricated in deuterium passivated GaAs and InP substrates, and planar and channel waveguide operation were demonstrated. Channel waveguide losses as low as 12.7 dB/cm for GaAs, and 6.0 dB/cm for InP have been measured at ;Sample preparation techniques for optical waveguide fabrication were developed. The non-destructive outscattering loss measurement technique was used for waveguide propagation loss measurements at 0.83
机译:使用聚焦离子束注入和随后的快速热退火诱导的选择性混合,在多量子阱(MQW)样品中首次制造出了垂直通道波导。使用光致发光特性优化了制造参数。沟道波导的特征在于;湿法化学蚀刻配方和技术已经开发出来,可以通过在GaAs / AlGaAs和InP样品中进行浅蚀刻来制造低损耗脊形光波导。使用这些技术,在均匀的芯AlGaAs异质结构上制造了各种宽度的沟道波导,并对其进行了表征;在氘化的GaAs和InP衬底中制造了脊形波导,并展示了平面和沟道波导的工作原理。 GaAs的通道波导损耗低至12.7 dB / cm,InP的通道波导损耗低至6.0 dB / cm;开发了用于光波导制造的样品制备技术。使用非破坏性散射损耗测量技术在0.83的波长下测量波导传播损耗

著录项

  • 作者

    Kumar, Mukesh.;

  • 作者单位

    University of Cincinnati.;

  • 授予单位 University of Cincinnati.;
  • 学科 Engineering Electronics and Electrical.;Physics Condensed Matter.;Physics Optics.
  • 学位 Ph.D.
  • 年度 1997
  • 页码 285 p.
  • 总页数 285
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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