Investigation on AMOLED Based on ZnO:In:Nd Thin Film Transistors

机译：基于ZnO：In：Nd薄膜晶体管的AMOLED研究

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TFTs based on indium-gallium-zinc oxide semiconductor was fabricated using anodized aluminum oxide (A12O3) as gate dielectric layer and spin-coated photo-resist (PR) as passivation layer. The source/drain electrodes were patterned by lift-off process. The highest temperature was only 230 °C, and dry etch was not used during the whole process. The TFT device showed an electron mobility of as high as 18 cm2V‐1~s‐1 a on/off current ratio of 107, and a threshold voltage of 0.0 V. TFT backplane was designed and fabricated. And a 50 × 50-pixel-AMOLED driven by this kind of TFT was demonstrated.

机译：使用阳极氧化铝（Al2O3）作为栅极介电层，并使用旋涂光刻胶（PR）作为钝化层，制造了基于铟镓锌氧化物半导体的TFT。通过剥离工艺对源/漏电极进行构图。最高温度仅为230°C，并且在整个过程中未使用干法蚀刻。该TFT器件的电子迁移率高达18 cm2V-1〜s-1，开/关电流比为107，阈值电压为0.0V。设计并制造了TFT背板。并且，对由这种TFT驱动的50×50像素的AMOLED进行了说明。

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来源
《Proceedings of China display / Asia display 2011》|2011年|178-180|共3页
会议地点 Kunshan(CN)
作者
L. F. Lan; S.H.Bai; CF.Wang; R.X.Xu; J.B.Peng; M.Xu; J.H.Zou; H.Tao; L.Wang; M. Li; H. Xu; D.X.Luo; S.F.Yu;
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作者单位

Institute of Polymer Optoelectronic Material and Devices, Guangzhou, 510640 China State Key Laboratory of Luminescent Materials and Devices (South China University of Technology) New Vision Opto-Electronic Technology Co, Ltd, Guangzhou 510640, China;

Institute of Polymer Optoelectronic Material and Devices, Guangzhou, 510640 China State Key Laboratory of Luminescent Materials and Devices (South China University of Technology) New Vision Opto-Electronic Technology Co, Ltd, Guangzhou 510640, China;

Institute of Polymer Optoelectronic Material and Devices, Guangzhou, 510640 China State Key Laboratory of Luminescent Materials and Devices (South China University of Technology) New Vision Opto-Electronic Technology Co, Ltd, Guangzhou 510640, China;

Institute of Polymer Optoelectronic Material and Devices, Guangzhou, 510640 China State Key Laboratory of Luminescent Materials and Devices (South China University of Technology) New Vision Opto-Electronic Technology Co, Ltd, Guangzhou 510640, China;

Institute of Polymer Optoelectronic Material and Devices, Guangzhou, 510640 China State Key Laboratory of Luminescent Materials and Devices (South China University of Technology) New Vision Opto-Electronic Technology Co, Ltd, Guangzhou 510640, China;

Institute of Polymer Optoelectronic Material and Devices, Guangzhou, 510640 China State Key Laboratory of Luminescent Materials and Devices (South China University of Technology) New Vision Opto-Electronic Technology Co, Ltd, Guangzhou 510640, China;

Institute of Polymer Optoelectronic Material and Devices, Guangzhou, 510640 China State Key Laboratory of Luminescent Materials and Devices (South China University of Technology) New Vision Opto-Electronic Technology Co, Ltd, Guangzhou 10640, China;

Institute of Polymer Optoelectronic Material and Devices, Guangzhou, 510640 China State Key Laboratory of Luminescent Materials and Devices (South China University of Technology) New Vision Opto-Electronic Technology Co, Ltd, Guangzhou 510640, China;

Institute of Polymer Optoelectronic Material and Devices, Guangzhou, 510640 China State Key Laboratory of Luminescent Materials and Devices (South China University of Technology) New Vision Opto-Electronic Technology Co, Ltd, Guangzhou 510640, China;

Institute of Polymer Optoelectronic Material and Devices, Guangzhou, 510640 China State Key Laboratory of Luminescent Materials and Devices (South China University of Technology) New Vision Opto-Electronic Technology Co, Ltd, Guangzhou 510640, China;

Institute of Polymer Optoelectronic Material and Devices, Guangzhou, 510640 China State Key Laboratory of Luminescent Materials and Devices (South China University of Technology) New Vision Opto-Electronic Technology Co, Ltd, Guangzhou 510640, China;

Institute of Polymer Optoelectronic Material and Devices, Guangzhou, 510640 China State Key Laboratory of Luminescent Materials and Devices (South China University of Technology) New Vision Opto-Electronic Technology Co, Ltd, Guangzhou 510640, China;

Institute of Polymer Optoelectronic Material and Devices, Guangzhou, 510640 China State Key Laboratory of Luminescent Materials and Devices (South China University of Technology) New Vision Opto-Electronic Technology Co, Ltd, Guangzhou 510640, China;

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原文格式 PDF
正文语种 eng
中图分类显示设备、显示器;
关键词
Thin-film transistor; oxide semiconductor; AMOLED;

机译：薄膜晶体管；氧化物半导体; AMOLED;

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专利

1. Effects of Thermal Annealing on ZnO Thin-Film Transistor Characteristics and the Application of Excimer Laser Annealing in Plastic-Based ZnO Thin-Film Transistors [J] . Mitsuru Nakata, Kazushige Takechi, Toshimasa Eguchi, Japanese journal of applied physics . 2009,第8issue1期

机译：热退火对ZnO薄膜晶体管特性的影响及准分子激光退火在塑料基ZnO薄膜晶体管中的应用
2. Investigation of Al-Doped ZnO Channel Layer in ZnO-Based Transparent Thin-Film Transistors [J] . Hsin-Ying Lee, Wen-Ming Shien Japanese journal of applied physics . 2012,第2Issue1期

机译：ZnO基透明薄膜晶体管中Al掺杂ZnO沟道层的研究
3. Al-doped ZnO thin films deposited by confocal sputtering as electrodes in ZnO-based thin-film transistors [J] . Hernandez-Como N., Morales-Acevedo A., Aleman M., Microelectronic Engineering . 2016,第JANa期

机译：共聚焦溅射沉积的Al掺杂ZnO薄膜作为ZnO基薄膜晶体管的电极
4. Investigating the environmental stability of Li-doped ZnO based thin film transistors by two dimensional numerical simulations [C] . 23rd Annual Meeting of the IEEE Photonics Society . 2010

机译：通过二维数值模拟研究掺锂的ZnO基薄膜晶体管的环境稳定性
5. Development of ZnO-based thin film transistors and phosphorus-doped ZnO and (Zn, Mg)O by pulsed laser deposition. [D] . Li, Yuanjie. 2006

机译：通过脉冲激光沉积开发基于ZnO的薄膜晶体管和掺磷的ZnO和（Zn，Mg）O。
6. Three dimensional-stacked complementary thin-film transistors using n-type Al:ZnO and p-type NiO thin-film transistors [O] . Ching-Ting Lee, Chia-Chi Chen, Hsin-Ying Lee -1

机译：使用n型Al：ZnO和p型NiO薄膜晶体管的三维堆叠互补薄膜晶体管
7. Advanced amorphous silicon thin-Film transistors for AMOLEDs: electrical performance and stability [O] . Alex Kuo, Tae Kyung Won, Jerzy Kanicki, 2015

机译：用于amOLED的先进非晶硅薄膜晶体管：电气性能和稳定性
8. Study on the Hydrogenated ZnO-Based Thin Film Transistors. Part 1. [R] . Jang, J. 2011

机译：氢化ZnO基薄膜晶体管的研究。第1部分。

Investigation on AMOLED Based on ZnO:In:Nd Thin Film Transistors

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