Nonvolatile Memory Capacitors Based on Double Gold nanocrystals and HfO_2 Tunneling and HfNO/HfTiO Laminate Control High-k Insulator Layers

摘要

We describe all high-k, nonvolatile metal-insulator-semiconductor memory capacitor with an equivalent oxide thickness of 7.3 nm that makes use of two gold nanocrystal charge storage layers. The device exhibits a large memory hysteresis of about 0.75 V and 15 V, respectively at a sweeping gate voltages of ± 1V and +11V to -8V with a maximum storage charge density of ～2.75×10~(13) cm~(-2). The leakage current density is 3.6×10~(-5) A/cm~2 at -10 V and the breakdown voltage is in the range of 12.3V - 13.3V. A large memory hysteresis window of ～10 V was also observed after more than 10 hours of consecutive write / erase operations with a ± 7 V swing.