Nanopower Research Laboratories Rochester Institute of Technology, Rochester, NY, 14623;
Nanopower Research Laboratories Rochester Institute of Technology, Rochester, NY, 14623;
Nanopower Research Laboratories Rochester Institute of Technology, Rochester, NY, 14623;
Nanopower Research Laboratories Rochester Institute of Technology, Rochester, NY, 14623;
Nanopower Research Laboratories Rochester Institute of Technology, Rochester, NY, 14623;
Nanopower Research Laboratories Rochester Institute of Technology, Rochester, NY, 14623;
Wright Center for Photovoltaic Innovation and Commercialization (PVIC) University of Toledo, Toledo, Ohio, 43606;
Wright Center for Photovoltaic Innovation and Commercialization (PVIC) University of Toledo, Toledo, Ohio, 43606;
electric field; InAs/GaAs quantum dots; photovoltaic cells; carrier escape;
机译:InAs / GaAs量子点太阳能电池中量子点光电流对载流子逃逸性质的依赖性
机译:使用井中结构的InAs量子点中带太阳能电池中的两步光子吸收,可抑制热载流子逸出并有效产生光载流子
机译:减少InAs / GaAs量子点中带太阳能电池中的载流子逸出
机译:电场对载流子从InAs / GaAs量子点太阳能电池逃逸的影响
机译:在2-D电场下探索InAs / GaAs量子点和量子点分子中的单孔状态
机译:硅衬底上直接生长的InAs / InGaAs / GaAs量子点太阳能电池
机译:减少InAs / GaAs量子点中带太阳能电池中的载流子逸出