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Evaluation of partial coherent imaging using the transfer function in immersion lithography

机译:在浸没式光刻中使用传递函数评估部分相干成像

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The desired minimum feature size is decreasing for the future technology nodes. Immersion lithography has been actively pursued as a method of extending the resolution of optical lithography beyond 65 nm mode. Immersion lithography and hyper NA impact the selection and optimization of the various resolution enhancement techniques (RET). These can be selected as appropriate for each mask pattern. As the line width on target is narrower, the fine-line structure will no longer be discernible. Then this is the resolution limit of the system. Until recent times, the traditional means of determining the quality of an optical element or system of elements was to evaluate its limit of resolution. A useful parameter in evaluating the performance of a system is the modulation transfer function and this is analyzed for the hyper NA immersion lithography.
机译:对于未来的技术节点,所需的最小特征尺寸正在减小。作为将光学光刻的分辨率扩展到超过65 nm模式的方法,浸入式光刻已得到积极追求。浸没式光刻技术和超NA技术会影响各种分辨率增强技术(RET)的选择和优化。可以根据每个掩模图案适当地选择它们。随着目标上的线宽变窄,细线结构将不再可见。这就是系统的分辨率极限。直到最近,确定光学元件或元件系统质量的传统方法是评估其分辨率极限。评估系统性能的有用参数是调制传递函数,并针对超NA浸没式光刻技术进行了分析。

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