Growth of Large Transparent and Conducting Graphene Sheets Using Chemical Vapor Deposition

摘要

Growth and various properties of chemical vapor deposition (CVD) grown grapheme were studied. The graphene was synthesized on Ni coated SiO_2/Si substrate using CH4 and H_2 gases at 1000°C. The samples were characterized with scanning electron microscopy (SEM), transmission electron microscopy (TEM), Raman, UV/Vis/IR spectroscopy, optical microscopy and 4-probe electrical measurements before or after transferring samples onto arbitrary substrates such as quartz glass, KBr, Si wafer, and polycarbonate (PC) film. Raman spectra proved that samples consist of from one to five graphene layers. TEM images confirmed the results of Raman analysis. A large part of the samples was formed by a highly crystalline single layer. The other parts consisted of multilayer domains where crystal boundaries were clearly visible in atomic resolution scale.