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Test time impact of redundancy repair in embedded flash memory

机译:在嵌入式闪存中的冗余修复测试时间影响

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Redundancy repair of high-density commodity Flash memory is an effective technique to improve per-wafer yield by trading-off increased die size and increased time at wafer-probe for the ATE system to analyze the failing bits and make the necessary repairs. In embedded Flash, where densities are typically much lower and test requirements more diverse, the benefit of redundancy repair is less certain. This paper discusses two key aspects of redundancy repair for embedded Flash memory blocks.
机译:高密度商品闪存的冗余修复是通过交易 - 关闭的芯片尺寸和晶圆探头的增加时间来提高每晶片产量的有效技术,用于分析故障位并进行必要的维修。在嵌入式闪光中,密度通常更低,测试要求更加多样化,冗余修复的好处不太确定。本文讨论了嵌入式闪存块冗余修复的两个关键方面。

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