Defect Oriented Testing of the Strap Problem Under Process Variations in DRAMs

摘要

Efficient and effective methods are needed to generate defect oriented tests for todays VLSI circuits. This paper describes an industrial case study for using defect injection and Spice simulation to generate defect oriented tests for the so-called strap defects in DRAMs, taking both the sensitivity of this defect to process variations and bit line coupling into consideration. The paper discusses all the different stages of the test generation process, starting with defect modeling, followed by the simulation methodology, test generation and optimization, and finally test application and industrial evaluation performed in Qimonda. Results show that the generated tests have the same coverage as previously used tests with possible test time reduction of up to 59%. The analysis also identifies the slow process corner and the data backgrounds 11 and 01 as the most stressful combinations to test the strap. The paper also discusses a test method used to account for process variations and detect the fault in any process corner.