Exploring error-tolerant low-power multiple-output read scheme for memristor-based memory arrays

摘要

In an effort to reduce the overall read/write power consumption in emerging memory technologies, efficient read/write schemes have recently attracted increased attention. Among these emerging technologies is the memristor-based resistive random access memory (ReRAM) with simpler structures and capability of producing highly dense memory through the sneak-path prone crossbar architecture. In this paper, a multiple-cells read solution to reduce the overall energy consumption when reading from a memory array is considered. A closed form expression for the noise margin effect is derived and analysis shows that there is zero sneak-path when sensing certain patterns of stored data. The multiple-cells readout method was thus used to analyse an energy efficient Inverted-Hamming (I-H) architecture capable of detecting and correcting single-bit write error in memristor-based memory array.