A Novel Nondestructive Read/Write Circuit for Memristor-Based Memory Arrays

摘要

Emerging nonvolatile universal memory technology is vital for providing the huge storage capabilities, which is needed for nanocomputing facilities. Memristor, which is recently discovered and known as the missing fourth circuit element, is a potential candidate for the next-generation memory. Memristor has received extra attention in the last few years. To support this effort, this paper presents a novel read/write circuit that facilitates the reading and writing operation of the Memristor device as a memory element. The advantages of the proposed read/write circuit are threefold. First, the proposed circuit has a nondestructive successive reading cycle capability. Second, it occupies less die area. Finally, the proposed read/write circuit offers a significant improvement in power consumption and delay time compared with other read/write circuits.