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A Compact 8-bit Adder Design using In-Memory Memristive Computing: Towards Solving the Feynman Grand Prize Challenge

机译:一种紧凑的8位加法器设计,使用内存忆阻计算:解决Feynman Grand Prote挑战

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We introduce a new compact in-memory computing design for implementing 8-bit addition using eight vertically-stacked nanoscale crossbars of one-diode one-memristor 1D1M switches. Each crossbar in our design only has 5 rows and 4 columns. Hence, the design may be used to fabricate a compact 8-bit adder that meets the size constraint of 50nm × 50nm × 50nm imposed by the electrical component of the Feynman Grand Prize. The potential availability of sub-5nm nanoscale memristors and single-molecule diode devices coupled with the ability to fabricate high-density nanoscale memristor crossbars suggests that our design may eventually be fabricated to meet the size constraints of the Feynman Grand Prize.
机译:我们介绍了一种新的紧凑型内存计算设计,用于使用八个垂直堆叠的纳米级十字架1D1M开关实现8位添加。我们设计中的每个横梁只有5行和4列。因此,该设计可用于制造紧凑的8位加法器,其符合Feynman Grand奖的电气部件施加的50nm×50nm×50nm的尺寸约束。亚5NM纳米级椎间盘和单分子二极管器件的潜在可用性与制造高密度纳米级忆射线斜盘的能力表示,我们的设计最终可能会被制造成满足Feynman Grand奖的规模约束。

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